View AM82731-006_253497.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

AM82731-006
.REFRACTORY/ .EMI .5: .LOW .I .OVERLAY .METAL/ .P .BANDWI
DESCRIPTION
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
G OLD METALLIZATION T TER SITE BALLASTED 1 VSWR CAPABILITY THERMAL RESISTANCE NPUT/OUTPUT IMPEDANCE MATCHING GEOMETRY C ERAMIC HERMETIC PACKAGE OUT = 5.5 W. MIN. WITH 5.6 dB GAIN D TH = 400 MHz
.400 x .400 2NLFL (S042) hermetically sealed ORDER CODE AM 82731-006 BRANDING 82731-6
PIN CONNECTION The AM82731-006 device is a medium power silicon bipolar NPN transistor specifically designed for SBand radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 5:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding techniques ensure high reliability and product consistency. The AM82731-006 is supplied in the hermetic metal/ceramic package with internal input/output impedance matching circuitry, and is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25C)
Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base
PDISS Ic VCC TJ T STG
Power Dissipation* Device Current*
(TC
100C)
40 1.8 34 250 - 65 to +200
W A V C C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 3.75 C/W
*Applies only to rated RF amplifier operation
August 1992
1/4
AM82731-006
ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC
Value Symbol Test Conditions Min. Typ. Max. Unit
BV CBO BV EBO BV CER ICES hFE
ICC =
5mA
IE = 0mA IC = 0mA RBE = 10 IC = 500mA
50 3.5 50 -- 10
-- -- -- -- --
-- -- -- 4 --
V V V mA --
IE = 1mA IC = 5mA VCE = 30V VCE = 5V
DYNAMIC
Symbol Test Conditions Min. Value Typ. Max. Unit
POUT C GPB
Note:
f = 2.7 -- 3.1GHz f = 2.7 -- 3.1GHz f = 2.7 -- 3.1GHz = =
100S 10%
PIN = 1.5W PIN = 1.5W PIN = 1.5W
VCC = 30V VCC = 30V VCC = 30V
5.5 27 5.6
6.0 32 6.0
-- -- --
W % dB
Pul se Width Dut y Cycle
TYPICAL PERFORMANCE TYPICAL BROADBAND PERFORMANCE
2/4
AM82731-006
IMPEDANCE DATA TYPICAL INPUT IMPEDANCES ZIN ZIN M TYPICAL COLLECTOR LOAD IMPEDANCES ZCL L H
ZCL FREQ. L = 2.7 GHz ZIN() ZCL() H 9.0 + j 22.0 48.0 + j 11.5
M
L
* = 2.9 GHz 9.0 + j 23.0 43.0 + j 9.0 M = 3.1 GHz 12.5 + j 25.0 30.0 + j 3.0 * = 3.3 GHz 20.0 + j 25.0 21.5 + j 0.0 H = 3.5 GHz 22.0 + j 22.5 16.0 - j 3.0
PIN = 1.5W VCC = 30V Normalized to 50 ohms
TEST CIRCUIT
All dimensions are in inches. Substrate material: .025 thick Al2O3 (Er = 9.6) C1 C2 : 1500 pF RF Feedthru : 100 F Electrolytic C3 L1 L2 : 100 pF Chip Capacitor : No. 32 Wire, 0.062 Inch Long : Printed RF Choke
3/4
AM82731-006
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
4/4

▲Up To Search▲

Price & Availability of AM82731-006

	To Download AM82731-006 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .